Thermal Annealing of Radiation Induced Defects: A Diffusion-Limited Process?
نویسندگان
چکیده
منابع مشابه
Annealing of radiation induced defects in silicon in a simplified phenomenological model
The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitia...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 1983
ISSN: 0018-9499
DOI: 10.1109/tns.1983.4333081